2SJ552(L),2SJ552(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-651B (Z) 3rd.
Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.
042 Ω typ.
• Low drive current.
• 4V gate drive devices.
• High speed switching.
Outline LDPAK 4 D 1 G 1 4 2 3 2 3 1.
Gate 2.
Drain 3.
Source 4.
Drain S 2SJ552(L),2SJ552(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings –60 ±20 –20 –80 –20 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current I DR Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: I...

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