2SK1155, 2SK1156
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching
regulator and DC-DC converter
Outline
TO-220AB
D G
1
2
3 1.
Gate 2.
Drain (Flange) 3.
Source
S
2SK1155, 2SK1156
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage 2SK1155 2SK1156 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at TC = 25°C VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Symbol VDSS
Ratings 450 500 ±3...