2SK1575 Silicon N-Channel MOS FET Application VHF amplifier Features • High gain, high efficiency PG = 13 dB, ηD = 65% typ (f = 190 MHz) • Compact package Suitable for push - pull circuit Outline 2SK1575 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Channel dissipation Channel temperature Storage temperature Note: 1.
Value at TC = 25°C Symbol VDSS VGSS ID Pch*1 Tch Tstg Ratings 180 ±20 16 200 150 –55 to +150 Unit V V A W °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source breakdown voltage*1 V(BR)DSS 180 Gate to source breakdown voltage*1 V(BR)GSS ±20 Zero gate voltage drain current*1 Gate to sour...

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