Ordering number:EN4311 N-Channel Silicon MOSFET 2SK1922 Ultrahigh-Speed Switching Applications Features · Low ON resistance.
· Ultrahigh-speed switching.
· High-speed diode (trr=100ns).
Package Dimensions unit:mm 2052C [2SK1922] 10.
2 3.
6 5.
1 4.
5 1.
3 2.
7 6.
3 15.
1 18.
0 5.
6 1.
2 2.
7 14.
0 0.
8 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg Tc=25°C Electrical Characteristics at Ta = 25˚C 2.
55 Conditions Parameter Symbol Conditions Drain-to-Source Breakdown Volta...

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