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2SK2003-01MR

Part Number 2SK2003-01MR
Manufacturer Fuji Electric
Description N-channel MOS-FET
Published Mar 30, 2005
Detailed Description 2SK2003-01MR FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power H...
Datasheet 2SK2003-01MR





Overview
2SK2003-01MR FAP-IIA Series Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 600V 2,4Ω 4A 40W Outline Drawing Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage(RGS=20KΩ) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max.
Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 600 600 4 16 ±30 40 150 -55 ~ +150 Uni...






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