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2SK2022-01M

Part Number 2SK2022-01M
Manufacturer Fuji Electric
Description N-channel MOS-FET
Published Mar 30, 2005
Detailed Description 2SK2022-01M FAP-IIA Series Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power Hi...
Datasheet 2SK2022-01M




Overview
2SK2022-01M FAP-IIA Series Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 500V 1,6Ω 5A 40W Outline Drawing Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage(RGS=20KΩ) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max.
Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 500 500 5 20 ±30 40 150 -55 ~ +150 Unit...






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