|
Part Number
|
2SK2166-01R |
|
Manufacturer
|
Fuji Electric |
|
Description
|
N-channel MOS-FET |
|
Published
|
Mar 30, 2005 |
|
Detailed Description
|
2SK2166-01R
FAP-IIIA Series
Features
High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forw...
|
|
Datasheet
|
2SK2166-01R
|
Overview
2SK2166-01R
FAP-IIIA Series
Features
High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode
N-channel MOS-FET
60V
0,03Ω
40A
80W
Outline Drawing
Applications
- Motor Control - General Purpose Power Amplifier - DC-DC Converters
Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item Drain-Source-Voltage Drain-Gate-Voltage (RGS=20KΩ) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max.
Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 60 60 40 160 ±20 80 150 -55 ...
Similar Datasheet