2SK2508
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2508
Switching
Regulator and DC−DC Converter and Motor Applications
z Low drain−source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 0.
18 Ω (typ.
) : |Yfs| = 13 S (typ.
) Unit: mm
: IDSS = 100 μA (max) (VDS = 250 V) : Vth = 1.
5 to 3.
5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 250 250 ±20 13 52 45 148 13 4.
5 150 −55 to 150 Unit V V V A A W mJ A mJ °C °C
Pulse (Not...