DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
2SK2512
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK2512 is N-Channel MOS Field Effect
Transistor designed for high current switching applications.
PACKAGE DIMENSIONS (in millimeter)
FEATURES
• Low On-Resistance RDS (on)1 = 15 mΩ (VGS = 10 V, ID = 23 A) RDS (on)2 = 23 mΩ (VGS = 4 V, ID = 23 A)
15.
0±0.
3
10.
0±0.
3
3.
2±0.
2
4.
5±0.
2 2.
7±0.
2
3±0.
1 4±0.
2
• Low Ciss
Ciss = 2 100 pF TYP.
• Built-in G-S Protection Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Tem...