DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
2SK2515
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK2515 is N-Channel MOS Field Effect
Transistor designed for high current switching applications.
PACKAGE DIMENSIONS (in millimeter)
4.
7 MAX.
1.
5
7.
0
FEATURES
• Super Low On-Resistance
RDS (on)1 = 9 mΩ (VGS = 10 V, ID = 25 A) RDS (on)2 = 14 mΩ (VGS = 4 V, ID = 25 A)
1.
0
15.
7 MAX.
4
3.
2±0.
2
20.
0±0.
2 6.
0
• Low Ciss Ciss = 3 400 pF TYP.
• Built-in G-S Protection Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel ...