Part Number
|
2SK2529 |
Manufacturer
|
Hitachi Semiconductor |
Description
|
Silicon N-Channel MOSFET |
Published
|
Mar 30, 2005 |
Detailed Description
|
2SK2529
Silicon N-Channel MOS FET
ADE-208-356F 7th. Edition
Application
High speed power switching
Features
• • • • L...
|
Datasheet
|
2SK2529
|
Overview
2SK2529
Silicon N-Channel MOS FET
ADE-208-356F 7th.
Edition
Application
High speed power switching
Features
• • • • Low on-resistance R DS(on) = 7 mΩ typ.
High speed switching 4 V gate drive device can be driven from 5 V source
Outline
TO-220CFM
D G
12 3
1.
Gate 2.
Drain 3.
Source
S
2SK2529
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
Value at Tc = 25°C 3.
Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID I D(pulse)* I DR I AP *
3...
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