2SK2569 Silicon N-Channel MOS FET ADE-208-384 1st.
Edition Application Low frequency power switching Features • • • • Low on-resistance.
R DS(on) = 2.
6 max.
(at V GS = 4 V, I D = 100mA) 2.
5V gate drive device.
Small package (MPAK).
Outline MPAK 3 1 2 D 1.
Source 2.
Gate 3.
Drain G S 2SK2569 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Notes 1.
PW ≤ 10 µs, duty cycle ≤ 1 % Symbol VDSS VGSS ID I D(pulse)* Pch* Tch Tstg 2 1 Ratings 50 ±20 0.
2 0.
4 150 150 –55 to +150 Unit V V A A mW °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source b...

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