2SK2570 Silicon N-Channel MOS FET Low Frequency Power Switching ADE-208-574 1st.
Edition Features • Low on-resistance R DS(on) = 0.
8 Ω typ.
(VGS = 4 V, I D = 100 mA) • 2.
5V gate drive devices.
• Small package (MPAK) Outline MPAK 3 1 2 D G 1.
Source 2.
Gate 3.
Drain S 2SK2570 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Note: 1.
PW ≤ 10 µs, duty cycle ≤ 1 % Symbol VDSS VGSS ID I D(pulse)* Pch Tch Tstg 1 Ratings 20 ±10 0.
2 0.
4 150 150 –55 to +150 Unit V V A A mW °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)