2SK2590
Silicon N-Channel MOS FET
Preliminary
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching
regulator, DC-DC converter, Motor Control
Outline
TO-220AB
D G
1
2
3 1.
Gate 2.
Drain (Flange) 3.
Source
S
2SK2590
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
Value at Tc = 25 °C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Ratings 200 ±20 7 28 7 50 ...