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2SK2655-01R

Part Number 2SK2655-01R
Manufacturer Fuji Electric
Description N-channel MOS-FET
Published Mar 30, 2005
Detailed Description 2SK2655-01R FAP-IIS Series Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power Hi...
Datasheet 2SK2655-01R




Overview
2SK2655-01R FAP-IIS Series Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated N-channel MOS-FET 900V 2Ω 8A 100W Outline Drawing Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier Maximum Ratings and Characteristics - Absolute Maximum Ratings T( C=25°C), unless otherwise specified Equivalent Circuit Rating 900 8 32 ±30 8 141 100 150 -55 ~ +150 Unit V A A V A mJ W °C °C Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Repetitive or Non-Repetitive (Tch ≤ 150°C) Avalanche Energy Max.
Power Dissipation ...






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