2SK2738 Silicon N Channel MOS FET High Speed Power Switching ADE-208-483 1st.
Edition Features • Low on-resistance R DS = 15 mΩ typ • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220CFM D G 1 2 3 S 1.
Gate 2.
Drain 3.
Source 2SK2738 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse)* 3 3 2 1 Ratings 60 ±20 40 160 40 40 137 30 150 –55 to +150 Unit V V A A A A mJ W °C °C Body to drain diode reverse drain current I DR Avalanche current Avalanche Energy Channel dissipation Channel temperature Storage temperature I AP * EAR* Pch* Tch Tstg Notes:...

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