Part Number
|
2SK2751 |
Manufacturer
|
Panasonic Semiconductor |
Description
|
Silicon N-Channel Junction FET |
Published
|
Mar 30, 2005 |
Detailed Description
|
Silicon Junction FETs (Small Signal)
2SK2751
Silicon N-Channel Junction FET
For impedance conversion in low frequency F...
|
Datasheet
|
2SK2751
|
Overview
Silicon Junction FETs (Small Signal)
2SK2751
Silicon N-Channel Junction FET
For impedance conversion in low frequency For pyroelectric sensor
0.
65±0.
15
+0.
2
unit: mm
0.
65±0.
15
2.
8 –0.
3
1.
5 –0.
05
+0.
25
s Features
q Low noise-figure (NF) q High gate to drain voltage VGDO q Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.
0.
95 2.
9 –0.
05
1
1.
9±0.
2
+0.
2
0.
95
3
0.
4 –0.
05
+0.
1
2
1.
45
+0.
2 1.
1 –0.
1
Parameter Gate to Drain voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature
Symbol VGDS ID IG PD Tch Tstg
Ratings −40 10 2 200 150 −55 to +150
Unit V mA mA mW °C °C
1: Source 2...
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