Part Number
|
2SK2809-01MR |
Manufacturer
|
Fuji Electric |
Description
|
N-channel MOS-FET |
Published
|
Mar 30, 2005 |
Detailed Description
|
2SK2809-01MR
FAP-IIIB Series
Features
High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanch...
|
Datasheet
|
2SK2809-01MR
|
Overview
2SK2809-01MR
FAP-IIIB Series
Features
High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated
N-channel MOS-FET
60V
0,01Ω
50A
50W
Outline Drawing
Applications
- Motor Control - General Purpose Power Amplifier - DC-DC converters
Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Maximum Avalanche Energy Max.
Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) V GS E AV PD T ch T stg Rating 60 50 200 ±20 453 50 150 -55 ~ +150
* L=0,241mH, VCC=24V
Equivalent Circuit
Unit V A A...
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