Part Number
|
2SK2896-01S |
Manufacturer
|
Fuji Electric |
Description
|
N-channel MOS-FET |
Published
|
Mar 30, 2005 |
Detailed Description
|
2SK2896-01L,S
FAP-IIIB Series
Features
High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanc...
|
Datasheet
|
2SK2896-01S
|
Overview
2SK2896-01L,S
FAP-IIIB Series
Features
High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated
60V
N-channel MOS-FET
12mΩ
±45A 60W
Outline Drawing
Applications
- Motor Control - General Purpose Power Amplifier - DC-DC converters
Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Maximum Avalanche Energy Max.
Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) V GS E AV PD T ch T stg Rating 60 ±45 ±180 ±20 461.
9 60 150 -55 ~ +150
L=0.
304mH,Vcc=24V
Unit V A A V mJ* W °C °C
- Elec...
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