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2SK2896-01S

Part Number 2SK2896-01S
Manufacturer Fuji Electric
Description N-channel MOS-FET
Published Mar 30, 2005
Detailed Description 2SK2896-01L,S FAP-IIIB Series Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanc...
Datasheet 2SK2896-01S




Overview
2SK2896-01L,S FAP-IIIB Series Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated 60V N-channel MOS-FET 12mΩ ±45A 60W Outline Drawing Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Maximum Avalanche Energy Max.
Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) V GS E AV PD T ch T stg Rating 60 ±45 ±180 ±20 461.
9 60 150 -55 ~ +150 L=0.
304mH,Vcc=24V Unit V A A V mJ* W °C °C - Elec...






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