2SK2957(L),2SK2957(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-567D (Z) 5th.
Edition Jun 1998 Features • Low on-resistance R DS(on) = 7mΩ typ.
• 4V gate drive devices.
• High speed switching Outline LDPAK 4 D 4 1 G 1 2 3 2 3 S 1.
Gate 2.
Drain 3.
Source 4.
Drain 2SK2957(L),2SK2957(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings 30 ±20 50 200 50 75 150 –55 to +1...

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