Part Number
|
2SK2958S |
Manufacturer
|
Hitachi Semiconductor |
Description
|
Silicon N Channel MOS FET |
Published
|
Mar 30, 2005 |
Detailed Description
|
2SK2958(L),2SK2958(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-568B (Z) 3rd. Edition Jun 1998 Featu...
|
Datasheet
|
2SK2958S
|
Overview
2SK2958(L),2SK2958(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-568B (Z) 3rd.
Edition Jun 1998 Features
• Low on-resistance R DS(on) = 5.
5mΩ typ.
• 4V gate drive devices.
• High speed switching
Outline
LDPAK
4 D 4
1 G 1
2
3
2
3
S
1.
Gate 2.
Drain 3.
Source 4.
Drain
2SK2958(L),2SK2958(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg
Note2 Note1
Ratings 30 ±20 75 300 75 100 150 –55 to...
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