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Part Number
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2SK3133S |
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Manufacturer
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Hitachi Semiconductor |
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Description
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N-Channel MOSFET |
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Published
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Mar 30, 2005 |
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Detailed Description
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2SK3133(L),2SK3133(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-720 (Z) Target Specification 1st. Ed...
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Datasheet
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2SK3133S
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Overview
2SK3133(L),2SK3133(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-720 (Z) Target Specification 1st.
Edition February 1999 Features
• Low on-resistance R DS(on) = 7 mΩ typ.
• Low drive current • 4 V gate drive device can be driven from 5 V source
Outline
LDPAK
4 4
D 1 1
2
3
G
2
3
1.
Gate 2.
Drain 3.
Source 4.
Drain
S
2SK3133(L),2SK3133(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg
Not...
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