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Part Number
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2SK3135S |
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Manufacturer
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Hitachi Semiconductor |
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Description
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N-Channel MOSFET |
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Published
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Mar 30, 2005 |
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Detailed Description
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2SK3135(L),2SK3135(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-695B (Z) 3rd. Edition February 1999 ...
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Datasheet
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2SK3135S
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Overview
2SK3135(L),2SK3135(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-695B (Z) 3rd.
Edition February 1999 Features
• Low on-resistance R DS(on) = 6 mΩ typ.
• Low drive current • 4 V gate drive device can be driven from 5 V source
Outline
LDPAK
4 4
2 1 1 2 3
1
2
3
1.
Gate 2.
Drain 3.
Source 4.
Drain
3
2SK3135(L),2SK3135(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP EAR Pch Tch Tstg
Note 3 Note 3 Note 2 Note 1
Ratin...
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