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2SK3270-01

Part Number 2SK3270-01
Manufacturer Fuji Electric
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SK3270-01 Trench Gate MOSFET Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanc...
Datasheet 2SK3270-01





Overview
2SK3270-01 Trench Gate MOSFET Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated N-channel MOS-FET 60V 6,5mΩ ±80A 135W Outline Drawing Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Maximum Avalanche Energy Max.
Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) VGS E AV PD T ch T stg Rating 60 ±80 ±320 +30 / -20 613 135 150 -55 ~ +150 * L=0,13mH, VCC=24V Equivalent Circuit Uni...






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