Ordering number:EN3006 N-Channel Junction Silicon FET 2SK937 High-Frequency General-Purpose Amplifier Applications Features · Adoption of FBET process.
· Large yfs.
· Small Ciss.
Package Dimensions unit:mm 2019B [2SK937] 5.
0 4.
0 4.
0 0.
6 2.
0 14.
0 5.
0 0.
45 0.
5 0.
45 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSX VGDS IG ID PD Tj Tstg Electrical Characteristics at Ta = 25˚C 1.
3 Conditions Parameter Symbol Conditions Gate-to-Drain Breakdown Voltage Gate-to-Source Leakage Current Zero-Gate Voltage Drain Curre...

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