FJPF3835
FJPF3835
Power Amplifier
• High Current Capability : IC=8A • High Power Dissipation • Wide S.
O.
A
1
TO-220F 2.
Collector 3.
Emitter
1.
Base
NPN Epitaxial Silicon
Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO VCEO VEBO IC ICP PC TJ TSTG
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature
Value 200 120 8 8 16 30 150 - 55 ~ 150
Units V V V A A W °C °C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob tON tF tSTG
* Pulse Test : PW=...