FJPF9020
FJPF9020
Monolithic Construction With Built In Base-Emitter Shunt Resistors
• High Collector-Base Breakdown Voltage : BVCBO = -550V • High DC Current Gain : hFE = 550 @ VCE = -4V, IC = -1A (Typ.
) • Industrial Use
1
TO-220F 2.
Collector 3.
Emitter
1.
Base
PNP Epitaxial Darlington
Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value - 550 - 550 -6 -2 -4 15 150 - 55 ~ 150 Units V V V A A W °C °C
R1 R2 E B Equivalent Circuit C
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