FJV3101R
FJV3101R
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=4.
7KΩ, R2=4.
7KΩ) • Complement to FJV4101R
3
2 1
SOT-23
1.
Base 2.
Emitter 3.
Collector
Equivalent Circuit C
Marking
R21
NPN Epitaxial Silicon
Transistor
R1 B R2
E
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value 50 50 10 100 200 150 -55 ~ 150 Units V V V mA mW °C °C
Electrical Characteristics Ta=25°C unless otherw...