FMBA14
Discrete POWER & Signal Technologies
FMBA14
C2 E1 C1
B2 E2
pin #1 B1
SuperSOT™-6
Mark: .
1N
NPN Multi-Chip Darlington
Transistor
This device is designed for applications requiring extremely high current gain at collector currents to 1.
0 A.
Sourced from Process 05.
Absolute Maximum Ratings*
Symbol
VCES VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
30 30 10 1.
2 -55 to +150
Units
V V V A °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES...