Ordering number:EN3482
FC12
TR:
NPN Epitaxial Plannar Silicon
Transistor FET:N-Channel Junction Silicon
Transistor
High-Frequency Amp, AM Applications, Low-Frequency Amp
Features
· Composite type with 2
transistors contained in the CP package currently in use, improving the mounting efficiency greatly.
· The FC12 is formed with two chips, being equivalent to the 2SC4639, placed in one package.
· Common drain and emitter.
Package Dimensions
unit:mm 2075
[FC12]
Electrical Connection
C:Collector G:Gate S:Source E/D:Emitter/Drain B:Base SANYO:CP5
Switching Time Test Circuit
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter [FET] Drain-to-Source Voltage Gate-to-Drain Voltage Gat...