SOT89
PNP SILICON PLANAR HIGH VOLTAGE
TRANSISTOR
ISSUE 3 - NOVEMBER 1995 7
FCX596
D
PARTMARKING DETAIL P96 S G SOT89 SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg VALUE -220 -200 -5 -1 -0.
3 -200 1 -65 to +150 MAX.
UNIT CONDITIONS.
V V V -100 -100 -100 -0.
2 -0.
35 -1.
0 -0.
9 100 100 85 35 150 10 nA nA nA V V V V IC=-100µ A IC=-10mA* IE=-100µ A VCB=-200V VEB=-4V VCES=-200V IC=-100mA,IB=-10mA IC=-250mA IB=-25mA* IC=-250mA,IB=-25mA* IC=-250mA,VCE=-10V* IC=-1mA, VCE=-10V IC=-100mA,VCE=-10V* IC=-250mA,VCE=-10V* IC=-400mA,VCE=-10V, MHz IC=-50mA, VCE=-10V f=100MHz pF VCB=-10V, f=1MHz D
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pu...