FDB15N50 — N-Channel UniFETTM MOSFET FDB15N50 N-Channel UniFETTM MOSFET 500 V, 15 A, 380 mΩ November 2013 Features • Low gate charge Qg results in simple drive requirement (Typ.
33 nC) • Improved Gate, avalanche and high reapplied dv/dt ruggedness • Reduced RDS(on) ( 330mΩ ( Typ.
) @ VGS = 10 V, ID = 7.
5 A) • Reduced Miller capacitance and low Input capacitance (Typ.
Crss = 16 pF) • Improved switching speed with low EMI • 175oC rated junction temperature Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher ...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)