FDC3616N January 2004 FDC3616N 100V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Features • 3.
7 A, 100 V.
RDS(ON) = 70 mΩ @ VGS = 10 V RDS(ON) = 80 mΩ @ VGS = 6.
0 V • High performance trench technology for extremely low RDS(ON) • Low gate charge (23nC typical) • High power and current handling capability • Fast switching speed.
Applications • DC/DC converter • Load Switching Bottom Drain G S S S SuperSOT-6 TM 1 S 6 5 4 2 3 S ...

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