Part Number
|
FDC602P |
Manufacturer
|
Fairchild Semiconductor |
Description
|
P-Channel MOSFET |
Published
|
Mar 30, 2005 |
Detailed Description
|
FDC602P
April 2001
FDC602P
P-Channel 2.5V PowerTrench® Specified MOSFET
General Description
This P-Channel 2.5V speci...
|
Datasheet
|
FDC602P
|
Overview
FDC602P
April 2001
FDC602P
P-Channel 2.
5V PowerTrench® Specified MOSFET
General Description
This P-Channel 2.
5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process.
It has been optimized for power management applications with a wide range of gate drive voltage (2.
5V – 12V).
Applications
• Battery management • Load switch • Battery protection
Features
• –5.
5 A, –20 V RDS(ON) = 35 mΩ @ VGS = –4.
5 V RDS(ON) = 50 mΩ @ VGS = –2.
5 V
• Fast switching speed • High performance trench technology for extremely
low RDS(ON)
S D D
SuperSOT TM-6
G D D
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS V GSS ID
Parameter
Drain-Source Voltage Gat...
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