FDC606P December 2001 FDC606P P-Channel 1.
8V Specified PowerTrench MOSFET General Description This P-Channel 1.
8V specified MOSFET uses Fairchild’s low voltage PowerTrench process.
It has been optimized for battery power management applications.
Features • –6 A, –12 V.
RDS(ON) = 26 mΩ @ VGS = –4.
5 V RDS(ON) = 35 mΩ @ VGS = –2.
5 V RDS(ON) = 53 mΩ @ VGS = –1.
8 V Applications • Battery management • Load switch • Battery protection • Fast switching speed • High performance trench technology for extremely low RDS(ON) D D S 1 2 G 6 5 4 SuperSOT TM -6 D D 3 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – ...

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