Part Number
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FDC6310P |
Manufacturer
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Fairchild Semiconductor |
Description
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Dual P-Channel 2.5V Specified PowerTrench MOSFET |
Published
|
Mar 30, 2005 |
Detailed Description
|
FDC6310P
April 2001
FDC6310P
Dual P-Channel 2.5V Specified PowerTrench® MOSFET
General Description
These P-Channel 2.5...
|
Datasheet
|
FDC6310P
|
Overview
FDC6310P
April 2001
FDC6310P
Dual P-Channel 2.
5V Specified PowerTrench® MOSFET
General Description
These P-Channel 2.
5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.
These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.
Features
• –2.
2 A, –20 V.
RDS(ON) = 125 mΩ @ V GS = –4.
5 V RDS(ON) = 190 mΩ @ V GS = –2.
5 V • Low gate charge • Fast switching speed • High performance trench t...
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