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Part Number
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FDC6318P |
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Manufacturer
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Fairchild Semiconductor |
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Description
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Dual P-Channel 1.8V PowerTrench Specified MOSFET |
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Published
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Mar 30, 2005 |
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Detailed Description
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FDC6318P
December 2001
FDC6318P
Dual P-Channel 1.8V PowerTrench Specified MOSFET
General Description
These P-Channel ...
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Datasheet
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FDC6318P
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Overview
FDC6318P
December 2001
FDC6318P
Dual P-Channel 1.
8V PowerTrench Specified MOSFET
General Description
These P-Channel 1.
8V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.
Features
• –2.
5 A, –12 V.
RDS(ON) = 90 mΩ @ VGS = –4.
5 V RDS(ON) = 125 mΩ @ VGS = –2.
5 V RDS(ON) = 200 mΩ @ VGS = –1.
8 V • High performance trench technology for extremely low RDS(ON) • SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick)
Applications
• Power management • Load switch
S1 D1
D2
4 5
G2...
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