Part Number
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FDC637AN |
Manufacturer
|
Fairchild Semiconductor |
Description
|
N-Channel MOSFET |
Published
|
Mar 30, 2005 |
Detailed Description
|
FDC637AN
November 1999
FDC637AN
Single N-Channel, 2.5V Specified PowerTrenchTM MOSFET
General Description
This N-Chann...
|
Datasheet
|
FDC637AN
|
Overview
FDC637AN
November 1999
FDC637AN
Single N-Channel, 2.
5V Specified PowerTrenchTM MOSFET
General Description
This N-Channel 2.
5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.
These devices have been designed to offer exceptional power dissipation in a very small footprint compared with bigger SO-8 and TSSOP-8 packages.
Features •
6.
2 A, 20 V.
RDS(on) = 0.
024 Ω @ VGS = 4.
5 V RDS(on) = 0.
032 Ω @ VGS = 2.
5 V
• • • •
Fast switching speed.
Low gate charge (10.
5nC typical).
High performance trench technology for extreme...
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