Part Number
|
FDD2612 |
Manufacturer
|
Fairchild Semiconductor |
Description
|
200V N-Channel PowerTrench MOSFET |
Published
|
Mar 30, 2005 |
Detailed Description
|
FDD2612
August 2001
FDD2612
200V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been desi...
|
Datasheet
|
FDD2612
|
Overview
FDD2612
August 2001
FDD2612
200V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Features
• 4.
9 A, 200 V.
RDS(ON) = 720 mΩ @ VGS = 10 V
• High performance trench technology for extremely low RDS(ON) • High power and current handling capability • Fast switching speed • Low gate charge (8nC typical)
Applications
• DC/DC converter
D
D G
G
S
TO-252
S
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Vol...
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