FDG326P January 2001 FDG326P P-Channel 1.
8V Specified PowerTrench MOSFET General Description This P-Channel 1.
8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management applications.
Features • –1.
5 A, –20 V.
RDS(ON) = 140 mΩ @ VGS = –4.
5 V RDS(ON) = 180 mΩ @ VGS = –2.
5 V RDS(ON) = 250 mΩ @ VGS = –1.
8 V Applications • Battery management • Load switch • Low gate charge • High performance trench technology for extremely low RDS(ON) • Compact industry standard SC70-6 surface mount package 1 6 2 5 3 4 SC70-6 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain C...

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