FDG329N
October 2001
FDG329N
20V N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized use in small switching
regulators, providing an extremely low RDS(ON) and gate charge (QG) in a small package.
Features
• 1.
5 A, 20 V.
RDS(ON) = 90 mΩ @ VGS = 4.
5 V.
RDS(ON) = 115 mΩ @ VGS = 2.
5 V • Fast switching speed • Low gate charge (3.
3 nC typical) • High performance trench technology for extremely low RDS(ON) • High power and current handling capability.
Applications
• • • DC/DC converter Power management ...