April 1998
FDP7030L / FDB7030L N-Channel Logic Level Enhancement Mode Field Effect
Transistor
General Description
These N-Channel logic level enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features
100 A, 30 V.
RDS(ON) = 0.
007 Ω @ VGS=10 V RDS(ON) = 0.
010 Ω @ VGS=5 V.
Critical DC electrical parameters specified...