Part Number
|
FDR840P |
Manufacturer
|
Fairchild Semiconductor |
Description
|
P-Channel MOSFET |
Published
|
Mar 30, 2005 |
Detailed Description
|
FDR840P
April 2000 PRELIMINARY
FDR840P
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
This P-Channel...
|
Datasheet
|
FDR840P
|
Overview
FDR840P
April 2000 PRELIMINARY
FDR840P
P-Channel 2.
5V Specified PowerTrench MOSFET
General Description
This P-Channel 2.
5V specified MOSFET uses a rugged gate PowerTrench process.
It has been optimized for power management applications with a wide range of gate drive voltage (2.
5V – 12V).
Features
• –10 A, –20 V.
RDS(ON) = 0.
011 Ω @ VGS = –4.
5 V RDS(ON) = 0.
016 Ω @ VGS = –2.
5 V • Fast switching speed.
• High performance trench technology for extremely low RDS(ON) • High power and current handling capability.
Applications
• Power management • Load switch • Battery protection
D S
D
S
5 6 4 3 2 1
SuperSOT -8
TM
D D
D
G
7 8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Sou...
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