Part Number
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FDR842P |
Manufacturer
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Fairchild Semiconductor |
Description
|
P-Channel MOSFET |
Published
|
Mar 30, 2005 |
Detailed Description
|
FDR842P
December 2001
FDR842P
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
This P-Channel –1.8V sp...
|
Datasheet
|
FDR842P
|
Overview
FDR842P
December 2001
FDR842P
P-Channel 1.
8V Specified PowerTrench MOSFET
General Description
This P-Channel –1.
8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management applications.
Features
• –11 A, –12 V RDS(ON) = 9 mΩ @ VGS = –4.
5 V RDS(ON) = 12 mΩ @ VGS = –2.
5 V RDS(ON) = 16 mΩ @ VGS = –1.
8 V • Fast switching speed • High performance trench technology for extremely low RDS(ON) • High power and current handling capability
Applications
• Power management • Load switch • Battery protection
D S
D
S
5 6 4 3 2 1
SuperSOT -8
TM
D
D
D
G
7 8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltag...
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