Part Number
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FDS2170N3 |
Manufacturer
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Fairchild Semiconductor |
Description
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N-Channel MOSFET |
Published
|
Mar 30, 2005 |
Detailed Description
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FDS2170N3
May 2003
FDS2170N3
200V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been des...
|
Datasheet
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FDS2170N3
|
Overview
FDS2170N3
May 2003
FDS2170N3
200V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.
Features
• 3.
0 A, 200 V.
RDS(ON) = 128 mΩ @ VGS = 10 V • High performance trench technology for extremely low RDS(ON) • High power and current handling capability • Fast switching, low gate charge (26nC typical) • FLMP SO-8 package: Enhanced thermal performance in industry-standard package size
Applications
• S...
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