FDS6162N7 May 2003 FDS6162N7 20V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.
Features • 23 A, 20 V RDS(ON) = 3.
5 mΩ @ VGS = 4.
5 V RDS(ON) = 5.
0 mΩ @ VGS = 2.
5 V • High performance trench technology for extremely low RDS(ON) • High power and current handling capability • Fast switching • FLMP SO-8 package: Enhanced thermal performance in industry-standard package size Applications • Synch...

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