|
Part Number
|
FDS6375 |
|
Manufacturer
|
Fairchild Semiconductor |
|
Description
|
P-Channel MOSFET |
|
Published
|
Mar 30, 2005 |
|
Detailed Description
|
FDS6375
September 2001
FDS6375
P-Channel 2.5V Specified PowerTrench® MOSFET
General Description
This P-Channel 2.5V s...
|
|
Datasheet
|
FDS6375
|
Overview
FDS6375
September 2001
FDS6375
P-Channel 2.
5V Specified PowerTrench® MOSFET
General Description
This P-Channel 2.
5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process.
It has been optimized for power management applications with a wide range of gate drive voltage (2.
5V – 8V).
Applications
• Power management • Load switch • Battery protection
Features
• –8 A, –20 V.
RDS(ON) = 24 mΩ @ VGS = –4.
5 V RDS(ON) = 32 mΩ @ VGS = –2.
5 V
• Low gate charge (26 nC typical)
• High performance trench technology for extremely low RDS(ON)
• High current and power handling capability
DD DD DD DD
SO-8
Pin 1SO-8 SS SS SS GG
Absolute Maximum Ratings TA=25oC...
Similar Datasheet