Part Number
|
FDS6875 |
Manufacturer
|
Fairchild Semiconductor |
Description
|
Dual P-Channel MOSFET |
Published
|
Mar 30, 2005 |
Detailed Description
|
November 1998
FDS6875 Dual P-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
These P-Channel 2.5V speci...
|
Datasheet
|
FDS6875
|
Overview
November 1998
FDS6875 Dual P-Channel 2.
5V Specified PowerTrenchTM MOSFET
General Description
These P-Channel 2.
5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
These devices are well suited for portable electronics applications: load switching and power management, battery charging and protection circuits.
Features
-6 A, -20 V.
RDS(ON) = 0.
030 Ω @ VGS = -4.
5 V, RDS(ON) = 0.
040 Ω @ VGS = -2.
5 V.
Low gate charge (23nC typical).
High performance trench technology for extremely low RDS(ON).
High power and curren...
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