FDW2520C November 2000 FDW2520C Complementary PowerTrench MOSFET General Description This complementary MOSFET device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Features • Q1: N-Channel 6 A, 20 V.
RDS(ON) = 18 mΩ @ VGS = 4.
5 V RDS(ON) = 28 mΩ @ VGS = 2.
5 V Applications • DC/DC conversion • Power management • Load switch • Q2: P-Channel –4.
4A, 20 V.
RDS(ON) = 35 mΩ @ VGS = –4.
5 V RDS(ON) = 57 mΩ @ VGS = –2.
5 V • High performance trench technology for extremely low RDS(ON) Low profile TSSOP-8 package • G2 S2 S2 D2 G1 S1 S1 D1 Pin ...

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