Part Number
|
FDZ2551N |
Manufacturer
|
Fairchild Semiconductor |
Description
|
Dual N-Channel 2.5V Specified PowerTrenchTM BGA MOSFET |
Published
|
Mar 30, 2005 |
Detailed Description
|
FDZ2551N
November 1999 ADVANCE INFORMATION
FDZ2551N
Dual N-Channel 2.5V Specified PowerTrenchTM BGA MOSFET
General Des...
|
Datasheet
|
FDZ2551N
|
Overview
FDZ2551N
November 1999 ADVANCE INFORMATION
FDZ2551N
Dual N-Channel 2.
5V Specified PowerTrenchTM BGA MOSFET
General Description
Combining Fairchild’s advanced 2.
5V specified PowerTrench process with state of the art BGA packaging, the FDZ2551N minimizes both PCB space and RDS(ON).
This dual BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDS(ON).
Features
•= 9 A, 20 V.
RDS(ON) = 0.
018 Ω=@ VGS = 4.
5 V RDS(ON) = 0.
030 Ω @ VGS = 2.
5 V.
•= Occupies only 0.
10 cm2 of PCB area.
1/3 the area of SO-8.
•= Ultra-thin package:...
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